JPH0441499B2 - - Google Patents

Info

Publication number
JPH0441499B2
JPH0441499B2 JP60295008A JP29500885A JPH0441499B2 JP H0441499 B2 JPH0441499 B2 JP H0441499B2 JP 60295008 A JP60295008 A JP 60295008A JP 29500885 A JP29500885 A JP 29500885A JP H0441499 B2 JPH0441499 B2 JP H0441499B2
Authority
JP
Japan
Prior art keywords
electrode layer
conductivity type
metal electrode
semiconductor substrate
region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP60295008A
Other languages
English (en)
Japanese (ja)
Other versions
JPS62154661A (ja
Inventor
Kazuo Kihara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Shibaura Electric Co Ltd filed Critical Tokyo Shibaura Electric Co Ltd
Priority to JP60295008A priority Critical patent/JPS62154661A/ja
Publication of JPS62154661A publication Critical patent/JPS62154661A/ja
Publication of JPH0441499B2 publication Critical patent/JPH0441499B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H10D89/601Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs
    • H10D89/611Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs using diodes as protective elements

Landscapes

  • Semiconductor Integrated Circuits (AREA)
JP60295008A 1985-12-26 1985-12-26 半導体装置 Granted JPS62154661A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP60295008A JPS62154661A (ja) 1985-12-26 1985-12-26 半導体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60295008A JPS62154661A (ja) 1985-12-26 1985-12-26 半導体装置

Publications (2)

Publication Number Publication Date
JPS62154661A JPS62154661A (ja) 1987-07-09
JPH0441499B2 true JPH0441499B2 (en]) 1992-07-08

Family

ID=17815141

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60295008A Granted JPS62154661A (ja) 1985-12-26 1985-12-26 半導体装置

Country Status (1)

Country Link
JP (1) JPS62154661A (en])

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5706163A (en) * 1995-11-28 1998-01-06 California Micro Devices Corporation ESD-protected thin film capacitor structures
JP5072282B2 (ja) * 2006-07-31 2012-11-14 新日本無線株式会社 半導体装置
US11063034B2 (en) 2019-06-27 2021-07-13 Micron Technology, Inc. Capacitor structures

Also Published As

Publication number Publication date
JPS62154661A (ja) 1987-07-09

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Legal Events

Date Code Title Description
EXPY Cancellation because of completion of term